A multi-gate device called a Gate-All-Around FET (GAAFET) interpolates multiple gate devices into a single device. A silicone nanowire with a gate encircling it makes up a GAAFET. It is a device with gates on each channel’s four sides. A single gate electrode controls these numerous gates.
The market worth of gate all around FET Technology in 2021 was USD 30.06 million, and it will be worth USD 472.25 million by 2030, growing at a 35.8% CAGR during the forecast period.
The improvement of the breakdown voltage of Gate-All-Around FET (GAAFET) Technology is the main driver of the global market growth for this technology. Additionally, the market for Gate-All-Around FET (GAAFET) Technology is primarily drive by reduced energy losses. Additionally, GAAFET has increased durability, high input impudence, and high efficiency, which help drive the market’s expansion.
The increasing demand for Nanotechnology has positively impacted the growth of the GAA FET market. There are different types of gate all around (GAA) FETs, including nanowire, hexagonal, ring, and slab FETs, as well as Nan sheet FETs. This nanotechnology-based design contributes to a small design and asserts that it can pack 30 billion transistors using
The GAAFET Technology market’s growth rate is hampere by high nanosheet transistor (nanosheet FET) fabrication costs and performance problems like current breakdown and leakage.
The government’s plans to build HVDC and smart grids, as well as an increase in consumer electronics demand, are set to offer the industry some sizable opportunities in the coming years. The US Department of Energy (DOE) announced the approval of $8.25 billion in loans from its Western Area Power Administration (WAPA) and Loan Programs Office (LPO) for efforts to expand and improve the nation’s transmission grid as part of the Biden Administration’s commitment to modernize the nation’s infrastructure and power grid and provide 100% clean energy to all businesses and homeowners by 2035.
GAAFET Technology is more widely use and has a wider range of applications. Cell phones, televisions, computers, and other consumer electronics products have gate-all-around FETs. They work in sectors like chip design and semiconductors. The semiconductor industry frequently uses GAAFET technology while designing integrated circuits. For effective power management, they can be utilize as switching devices, and LV switches (less than 200 volts) can be combine with power-saving devices like inverters. Smart devices use a variety of GAA FET applications to boost processor performance.
The market for global gate all around FET technology is rule by North America. The GAAFET Technology market will grow rapidly as a result of increasing demand, sophisticated equipment and technology, higher revenues, and initiatives to increase consumer awareness of the need. The US President’s budget proposal for 2021 included more than $1.7 billion for the National Nanotechnology Initiative, and as nanotechnology is one of the key prerequisites for GAAFETs, there is a significant opportunity for growth and development of the global GAAFET technology market. The demand will increase in Asia-Pacific as a result of its fast expanding population levels.
- Renesas Corporation
- Fairchild Semiconductor.
- Infineon Technologies
- ABB Group
- NXP SemiconductorsIXYS Corporation
- Toshiba Corporation
- Power Integration
The market worth of gate all around FET Technology in 2021 was USD 30.06 million, and it will be worth USD 472.25 million by 2030, growing at a 35.8% CAGR during the forecast period. Due to claims that GAA FETs can overcome FINFET technology’s shortcomings, including a reduction in energy loss and an improvement in durability and efficiency, demand for GAA FETs is growing. Furthermore, progress in nanotechnology is a key factor in spurring industry expansion and developing into a great substitute for FINFETs.
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